#include <SiStripDigi.h>

Inheritance diagram for sistrip::SiStripDigi:

Public Member Functions
virtual Processor *	newProcessor ()
	Method that returns a new instance of this processor. More...

	SiStripDigi ()
	Constructor - set processor description and register processor parameters. More...

virtual void	init ()
	Method called at the beginning of data processing - used for initialization. More...

virtual void	processRunHeader (LCRunHeader *run)
	Method called for each run - used for run header processing. More...

virtual void	processEvent (LCEvent *event)
	Method called for each event - used for event data processing. More...

virtual void	check (LCEvent *event)
	Method called after each event - used for data checking. More...

virtual void	end ()
	Method called after all data processing. More...

Protected Member Functions
void	digitize (const SimTrackerDigiHit *hit, SensorStripMap &sensorMap)
	Method digitizing given SimTrackerDigiHit - takes into account all relevant physical processes: landau fluctuations, drift, diffusion, Lorentz shift in magnetic field (input parameter: a pointer to digitized hit, output. More...

void	calcClusters (const SimTrackerDigiHit *hit, DigiClusterVec &hClusterVec)
	Method that calculates e-h clusters, where clusters are worked out from the hits (simulated in Geant 4 and transformed into local reference system) using predefined space precision. More...

void	calcCrossTalk (SensorStripMap &sensorMap)
	Method that calculates crosstalk effect, i.e. More...

void	genNoise (SensorStripMap &sensorMap)
	Method generating random noise using Gaussian distribution and add this effect to the final results. More...

void	transformSimHit (SimTrackerDigiHit *simDigiHit)
	Method transforming given SimTrackerHit into local ref. More...

double	getElecDiffusivity (double pos)
	Get method - returns ELECTRON diffusivity (parameters: electron mobility in cm^2/s, respectively position in cm). More...

double	getHoleDiffusivity (double pos)
	Get method - returns HOLE diffusivity (parameters: hole mobility in cm^2/s, respectively position in cm). More...

double	getElecDriftTime (double pos)
	Get method - returns total ELECTRON drift time (parameters: electron position in cm). More...

double	getHoleDriftTime (double pos)
	Get method - returns total HOLE drift time (parameters: hole position in cm). More...

double	getEField (double pos)
	Get method - returns electric intensity (parameters: position X in cm). More...

double	getElecMobility (double pos)
	Get method - returns ELECTRON mobility (parameters: electric intenzity in V/cm, respectively position X in cm). More...

double	getHoleMobility (double pos)
	Get method - returns HOLE mobility (parameters: electric intenzity in V/cm, respectively position X in cm). More...

CLHEP::Hep3Vector	getElecLorentzShift (double posZ)
	Method used for precise calculation of tan(Lorentz angle) - an angle of ELECTRON deflection due to magnetic field. More...

CLHEP::Hep3Vector	getHoleLorentzShift (double pos)
	Method used for precise calculation of tan(Lorentz angle) - an angle of HOLES deflection due to magnetic field. More...

double	getElecVelocity (double pos)
	Get method - returns ELECTRON actual velocity, calculated as follows: More...

double	getElecInvVelocity (double pos)
	Get method - returns actual ELECTRON inverse velocity, calculated as. More...

double	getHoleVelocity (double pos)
	Get method - returns HOLE actual velocity, calculated as follows: More...

double	getHoleInvVelocity (double pos)
	Get method - returns actual HOLE inverse velocity, calculated as follows: More...

void	printClusterInfo (const DigiCluster &cluster) const
	Method printing cluster info. More...

void	printClustersInfo (std::string info, const DigiClusterVec &clusterVec) const
	Method printing clusters info (parameter: info - extra information) More...

void	printHitInfo (std::string info, const SimTrackerDigiHit *hit) const
	Method printing hit info (parameter: info - extra information) More...

void	printProcessorParams () const
	Method printing processor parameters. More...

void	printStripsInfo (std::string info, const SensorStripMap &sensorMap) const
	Method printing info about signals at each strip. More...

Protected Attributes
std::string	_inColName
	LCIO input collection name. More...

std::string	_outColName
	LCIO output collection name. More...

std::string	_relColNamePlsToSim
	LCIO relation collection name - TrkPulse (Digit) <-> SimTrkHit. More...

std::string	_subdetector

float	_Vdepl
	Sensor depletion voltage in volts. More...

float	_Vbias
	Sensor bias voltage in volts. More...

float	_temp
	Sensor temperature in Kelvins. More...

bool	_electronicEffects
	Add crosstalk + noise? More...

float	_capInterStrip
	Mutual interstrip capacitance. More...

float	_capBackPlane
	Strip-to-backplane capacitance. More...

float	_capCoupl
	AC coupling - capacitance. More...

float	_elNoise
	CMS-like (common mode subtracted) noise added to the signal. More...

bool	_floatStripsRPhi
	Is every even strip floating in R-Phi? More...

bool	_floatStripsZ
	Is every even strip floating in Z? More...

float	_epsSpace
	Absolute digi precision in space in um. More...

float	_epsAngle
	Relative digi precision in Lorentz angle. More...

float	_epsTime
	Relative digi precision in Drift time. More...

bool	_landauFluct
	Define if internal Landau fluctuations (instead of Geant4) used. More...

float	_landauBetaGammaCut
	Below this beta*gamma factor internal Landau fluctuations not used. More...

double	_prodThreshOnDeltaRays
	Production threshold cut on delta electrons in keV (for Landau fluct.) - use the same as in Geant4 (80keV ~ 0.05 mm) More...

double	_pitchFront
	Pitch in the front sensors (in the middle) More...

double	_pitchRear
	Pitch in the rear sensors (in the middle) More...

bool	_integrationWindow
	Use integration window? More...

double	_startIntegration
	Start time of integration of the sensors in ns (everything before this value will not be digitized) More...

double	_stopIntegration
	Stop time of integration of the sensors in ns(everything after this value will not be digitized) More...

int	_currentCellID
	Actual layer+ladder+sensor ID encoded into one number. More...

short int	_currentLayerID
	Actual layer ID. More...

short int	_currentLadderID
	Actual ladder ID. More...

short int	_currentSensorID
	Actual sensor ID. More...

float	_sensorThick
	Actual sensor - Si wafer thickness in system of units. More...

CLHEP::Hep3Vector	_magField
	Magnetic field in T in detector reference system. More...

SiStripGeom *	_geometry
	All geometry information from Gear xml file. More...

CLHEP::RandGauss *	_genGauss
	Random number generator - Gaussian distribution. More...

SiEnergyFluct *	_fluctuate

Private Attributes
double	_timeCPU
	CPU time. More...

int	_nRun
	Run number. More...

int	_nEvent
	Event number. More...

Detailed Description

Definition at line 154 of file SiStripDigi.h.

Constructor & Destructor Documentation

sistrip::SiStripDigi::SiStripDigi ( )

Constructor - set processor description and register processor parameters.

Definition at line 68 of file SiStripDigi.cc.

Member Function Documentation

void sistrip::SiStripDigi::calcClusters	(	const SimTrackerDigiHit *	hit,
		DigiClusterVec &	hClusterVec
	)

protected

Method that calculates e-h clusters, where clusters are worked out from the hits (simulated in Geant 4 and transformed into local reference system) using predefined space precision.

As the precision might be different from a precision in Geant 4, the Landau fluctuations are performed here too, using internal Landau fluctuator. Required parameters: a pointer to SimTrackerDigiHit and two vectors of pointers to electron, resp. hole clusters (pairs) )

Definition at line 995 of file SiStripDigi.cc.

void sistrip::SiStripDigi::calcCrossTalk ( SensorStripMap & sensorMap )

protected

Method that calculates crosstalk effect, i.e.

each total charge is redistributed according the following relation: Q_neigh = Q_centr * C_inter/(C_inter + C_back + C_coupl), where neigh denotes neighbouring, centr central, inter interstrip, back strip2backplane and coupl coupling.

Definition at line 1100 of file SiStripDigi.cc.

void sistrip::SiStripDigi::check ( LCEvent * event )

virtual

Method called after each event - used for data checking.

Definition at line 739 of file SiStripDigi.cc.

void sistrip::SiStripDigi::digitize	(	const SimTrackerDigiHit *	hit,
		SensorStripMap &	sensorMap
	)

protected

Method digitizing given SimTrackerDigiHit - takes into account all relevant physical processes: landau fluctuations, drift, diffusion, Lorentz shift in magnetic field (input parameter: a pointer to digitized hit, output.

parameter: a sensor map of strips with total integrated charge and time when particle crossed the sensor)

Definition at line 795 of file SiStripDigi.cc.

void sistrip::SiStripDigi::end ( )

virtual

Method called after all data processing.

Definition at line 746 of file SiStripDigi.cc.

void sistrip::SiStripDigi::genNoise ( SensorStripMap & sensorMap )

protected

Method generating random noise using Gaussian distribution and add this effect to the final results.

Definition at line 1255 of file SiStripDigi.cc.

double sistrip::SiStripDigi::getEField ( double pos )

protected

Get method - returns electric intensity (parameters: position X in cm).

The intensity is calculated using analytically expressible relation between electron, resp. hole, position and electric field, derived for simple abrupt p-n junction with depletion voltage Vd and bias voltage Vb.

Relation:

E(x) = -(Vb+Vd/d - 2*x/d^2*Vd) in V/cm

Where d represents sensor thickness.

Definition at line 1444 of file SiStripDigi.cc.

double sistrip::SiStripDigi::getElecDiffusivity ( double pos )

protected

Get method - returns ELECTRON diffusivity (parameters: electron mobility in cm^2/s, respectively position in cm).

The diffusivity is calculated according to the Einstein relation:

D = k*temp/e * mobil(E(x),temp) in cm^2/s

Where k represents Boltzmann constant and e an elementary charge.

Definition at line 1365 of file SiStripDigi.cc.

double sistrip::SiStripDigi::getElecDriftTime ( double pos )

protected

Get method - returns total ELECTRON drift time (parameters: electron position in cm).

The total time is obtained as a numerical solution of following equation of motion:

dx/dt = v = mobil(E(x), temp) * E(x) Int(x0,d){1/(mobility(E(x), temp) * E(x)) * dx} = t Int(x0,d){1/v(E(x), temp) * dx} = t

Where mobil represents electron mobility, d sensor thickness, which corresponds to sensor back side (DSSDs - back strip side), i.e. the one with high voltage set; and v to electron actual velocity.

Definition at line 1387 of file SiStripDigi.cc.

double sistrip::SiStripDigi::getElecInvVelocity ( double pos )

protected

Get method - returns actual ELECTRON inverse velocity, calculated as.

follows: dt/dx = v^-1 = 1/(mobil(E(x), temp) * E(x))

Where E corresponds to elec. intenzity a mobil to electron mobility. (parameters: electron position in cm)

Definition at line 1580 of file SiStripDigi.cc.

Hep3Vector sistrip::SiStripDigi::getElecLorentzShift ( double posZ )

protected

Method used for precise calculation of tan(Lorentz angle) - an angle of ELECTRON deflection due to magnetic field.

(parameters: position z in cm). The Lorentz angle calculation utilizes so-called Romberg integration method, quite fast and reasonably precise method. The precision of the calculation is set via variable: _epsAngle by a user.

Relation:

tan(thetaL) = Int(x,d){mobil(E(z))*r*B*dz}/Int(z,d){dz} shiftX = -Int(x,d){mobil(E(z))*r*By*dz} shiftY = Int(x,d){mobil(E(z))*r*Bx*dz}

Where r = 1.13 + 0.0008*(temp-273) represents Hall scattering factor for electrons and d sensor thickness, corresponding to sensor back side.

Definition at line 1501 of file SiStripDigi.cc.

double sistrip::SiStripDigi::getElecMobility ( double pos )

protected

Get method - returns ELECTRON mobility (parameters: electric intenzity in V/cm, respectively position X in cm).

For the region where the mobility is dependent on the electric field, applied along <111> direction, following parametrization can be used:

mobil = vm/Ec * 1/(1 + (E(x)/Ec)^beta)^(1/beta) in cm^2/V.s

vm = 1.53*10^9*temp^(-0.87) cm/s Ec = 1.01*temp^(1.55) V/cm beta = 2.57*10^(-2)*temp(0.66)

For more details about parametrization see: A review of some charge transport properties of silicon by C.Jacobini et. al. (Solid-State Electronics, 1977, Vol. 20, p. 77-89)

Definition at line 1462 of file SiStripDigi.cc.

double sistrip::SiStripDigi::getElecVelocity ( double pos )

protected

Get method - returns ELECTRON actual velocity, calculated as follows:

dz/dt = v = mobil(E(x), temp) * E(x)

Where E corresponds to elec. intenzity a mobil to electron mobility. (parameters: electron position in cm)

Definition at line 1572 of file SiStripDigi.cc.

double sistrip::SiStripDigi::getHoleDiffusivity ( double pos )

protected

Get method - returns HOLE diffusivity (parameters: hole mobility in cm^2/s, respectively position in cm).

The diffusivity is calculated according to the Einstein relation:

D = k*temp/e * mobil(E(x),temp) in cm^2/s

Where k represents Boltzmann constant and e an elementary charge.

Definition at line 1376 of file SiStripDigi.cc.

double sistrip::SiStripDigi::getHoleDriftTime ( double pos )

protected

Get method - returns total HOLE drift time (parameters: hole position in cm).

The total time is obtained as a numerical solution of following equation of motion:

dx/dt = v = mobil(E(x), temp) * E(x) Int(x0,0){1/(mobility(E(x), temp) * E(x))*dx} = t Int(x0,0){1/v(E(x), temp) * dx} = t

Where mobil represents hole mobility, 0 corresponds to sensor strip side (with high voltage set to 0) and v to hole actual velocity.

Definition at line 1415 of file SiStripDigi.cc.

double sistrip::SiStripDigi::getHoleInvVelocity ( double pos )

protected

Get method - returns actual HOLE inverse velocity, calculated as follows:

dt/dx = v^-1 = 1/(mobil(E(x), temp) * E(x))

Where E corresponds to elec. intenzity a mobil to hole mobility. (parameters: hole position in cm)

Definition at line 1596 of file SiStripDigi.cc.

Hep3Vector sistrip::SiStripDigi::getHoleLorentzShift ( double pos )

protected

Method used for precise calculation of tan(Lorentz angle) - an angle of HOLES deflection due to magnetic field.

(parameters: position z in cm). The Lorentz angle calculation utilizes so-called Romberg integration method, quite fast and reasonably precise method. The precision of the calculation is set via variable: _epsAngle by a user.

Relation:

tan(thetaL) = Int(z,0){mobil(E(z))*r*B*dz}/Int(z,0){dz}

Where r = 0.72 - 0.0005*(temp-273) represents Hall scattering factor for holes and 0 corresponds to sensor strip side.

Definition at line 1538 of file SiStripDigi.cc.

double sistrip::SiStripDigi::getHoleMobility ( double pos )

protected

Get method - returns HOLE mobility (parameters: electric intenzity in V/cm, respectively position X in cm).

For the region where the mobility is dependent on the electric field, applied along <111> direction, following parametrization can be used:

mobil = vm/Ec * 1/(1 + (E(x)/Ec)^beta)^(1/beta) in cm^2/V.s

vm = 1.62*10^8*temp^(-0.52) cm/s Ec = 1.24*temp^(1.68) V/cm beta = 0.46*temp(0.17)

For more details about parametrization see: A review of some charge transport properties of silicon by C.Jacobini et. al. (Solid-State Electronics, 1977, Vol. 20, p. 77-89)

Definition at line 1479 of file SiStripDigi.cc.

double sistrip::SiStripDigi::getHoleVelocity ( double pos )

protected

Get method - returns HOLE actual velocity, calculated as follows:

dx/dt = v = mobil(E(x), temp) * E(x)

Where E corresponds to elec. intenzity a mobil to hole mobility. (parameters: hole position in cm)

Definition at line 1588 of file SiStripDigi.cc.

void sistrip::SiStripDigi::init ( )

virtual

Method called at the beginning of data processing - used for initialization.

Definition at line 207 of file SiStripDigi.cc.

virtual Processor* sistrip::SiStripDigi::newProcessor ( )

inlinevirtual

Method that returns a new instance of this processor.

Definition at line 158 of file SiStripDigi.h.

void sistrip::SiStripDigi::printClusterInfo ( const DigiCluster & cluster ) const

protected

Method printing cluster info.

Definition at line 1607 of file SiStripDigi.cc.

void sistrip::SiStripDigi::printClustersInfo	(	std::string	info,
		const DigiClusterVec &	clusterVec
	)		const

protected

Method printing clusters info (parameter: info - extra information)

Definition at line 1626 of file SiStripDigi.cc.

void sistrip::SiStripDigi::printHitInfo	(	std::string	info,
		const SimTrackerDigiHit *	hit
	)		const

protected

Method printing hit info (parameter: info - extra information)

Definition at line 1639 of file SiStripDigi.cc.

void sistrip::SiStripDigi::printProcessorParams ( ) const

protected

Method printing processor parameters.

Definition at line 1662 of file SiStripDigi.cc.

void sistrip::SiStripDigi::printStripsInfo	(	std::string	info,
		const SensorStripMap &	sensorMap
	)		const

protected

Method printing info about signals at each strip.

Definition at line 1709 of file SiStripDigi.cc.

void sistrip::SiStripDigi::processEvent ( LCEvent * event )

virtual

Method called for each event - used for event data processing.

Definition at line 309 of file SiStripDigi.cc.

void sistrip::SiStripDigi::processRunHeader ( LCRunHeader * run )

virtual

Method called for each run - used for run header processing.

Definition at line 288 of file SiStripDigi.cc.

void sistrip::SiStripDigi::transformSimHit ( SimTrackerDigiHit * simDigiHit )

protected

Method transforming given SimTrackerHit into local ref.

system of each sensor, resp. wafer, where the center is positioned such as x, y and z coordinates are always positive and x is in direction of thickness.

Definition at line 1294 of file SiStripDigi.cc.

Member Data Documentation

float sistrip::SiStripDigi::_capBackPlane

protected

Strip-to-backplane capacitance.

Definition at line 409 of file SiStripDigi.h.

float sistrip::SiStripDigi::_capCoupl

protected

AC coupling - capacitance.

Definition at line 410 of file SiStripDigi.h.

float sistrip::SiStripDigi::_capInterStrip

protected

Mutual interstrip capacitance.

Definition at line 408 of file SiStripDigi.h.

int sistrip::SiStripDigi::_currentCellID

protected

Actual layer+ladder+sensor ID encoded into one number.

Definition at line 433 of file SiStripDigi.h.

short int sistrip::SiStripDigi::_currentLadderID

protected

Actual ladder ID.

Definition at line 435 of file SiStripDigi.h.

short int sistrip::SiStripDigi::_currentLayerID

protected

Actual layer ID.

Definition at line 434 of file SiStripDigi.h.

short int sistrip::SiStripDigi::_currentSensorID

protected

Actual sensor ID.

Definition at line 436 of file SiStripDigi.h.

bool sistrip::SiStripDigi::_electronicEffects

protected

Add crosstalk + noise?

Definition at line 407 of file SiStripDigi.h.

float sistrip::SiStripDigi::_elNoise

protected

CMS-like (common mode subtracted) noise added to the signal.

Definition at line 411 of file SiStripDigi.h.

float sistrip::SiStripDigi::_epsAngle

protected

Relative digi precision in Lorentz angle.

Definition at line 416 of file SiStripDigi.h.

float sistrip::SiStripDigi::_epsSpace

protected

Absolute digi precision in space in um.

Definition at line 415 of file SiStripDigi.h.

float sistrip::SiStripDigi::_epsTime

protected

Relative digi precision in Drift time.

Definition at line 417 of file SiStripDigi.h.

bool sistrip::SiStripDigi::_floatStripsRPhi

protected

Is every even strip floating in R-Phi?

Definition at line 412 of file SiStripDigi.h.

bool sistrip::SiStripDigi::_floatStripsZ

protected

Is every even strip floating in Z?

Definition at line 413 of file SiStripDigi.h.

SiEnergyFluct* sistrip::SiStripDigi::_fluctuate

protected

Definition at line 450 of file SiStripDigi.h.

CLHEP::RandGauss* sistrip::SiStripDigi::_genGauss

protected

Random number generator - Gaussian distribution.

Definition at line 447 of file SiStripDigi.h.

SiStripGeom* sistrip::SiStripDigi::_geometry

protected

All geometry information from Gear xml file.

Definition at line 444 of file SiStripDigi.h.

std::string sistrip::SiStripDigi::_inColName

protected

LCIO input collection name.

Definition at line 395 of file SiStripDigi.h.

bool sistrip::SiStripDigi::_integrationWindow

protected

Use integration window?

Definition at line 428 of file SiStripDigi.h.

float sistrip::SiStripDigi::_landauBetaGammaCut

protected

Below this beta*gamma factor internal Landau fluctuations not used.

Definition at line 421 of file SiStripDigi.h.

bool sistrip::SiStripDigi::_landauFluct

protected

Define if internal Landau fluctuations (instead of Geant4) used.

Definition at line 420 of file SiStripDigi.h.

CLHEP::Hep3Vector sistrip::SiStripDigi::_magField

protected

Magnetic field in T in detector reference system.

Definition at line 441 of file SiStripDigi.h.

int sistrip::SiStripDigi::_nEvent

private

Event number.

Definition at line 464 of file SiStripDigi.h.

int sistrip::SiStripDigi::_nRun

private

Run number.

Definition at line 463 of file SiStripDigi.h.

std::string sistrip::SiStripDigi::_outColName

protected

LCIO output collection name.

Definition at line 396 of file SiStripDigi.h.

double sistrip::SiStripDigi::_pitchFront

protected

Pitch in the front sensors (in the middle)

Definition at line 424 of file SiStripDigi.h.

double sistrip::SiStripDigi::_pitchRear

protected

Pitch in the rear sensors (in the middle)

Definition at line 425 of file SiStripDigi.h.

double sistrip::SiStripDigi::_prodThreshOnDeltaRays

protected

Production threshold cut on delta electrons in keV (for Landau fluct.) - use the same as in Geant4 (80keV ~ 0.05 mm)

Definition at line 422 of file SiStripDigi.h.

std::string sistrip::SiStripDigi::_relColNamePlsToSim

protected

LCIO relation collection name - TrkPulse (Digit) <-> SimTrkHit.

Definition at line 397 of file SiStripDigi.h.

float sistrip::SiStripDigi::_sensorThick

protected

Actual sensor - Si wafer thickness in system of units.

Definition at line 437 of file SiStripDigi.h.

double sistrip::SiStripDigi::_startIntegration

protected

Start time of integration of the sensors in ns (everything before this value will not be digitized)

Definition at line 429 of file SiStripDigi.h.

double sistrip::SiStripDigi::_stopIntegration

protected

Stop time of integration of the sensors in ns(everything after this value will not be digitized)

Definition at line 430 of file SiStripDigi.h.

std::string sistrip::SiStripDigi::_subdetector

protected

Definition at line 401 of file SiStripDigi.h.

float sistrip::SiStripDigi::_temp

protected

Sensor temperature in Kelvins.

Definition at line 405 of file SiStripDigi.h.

double sistrip::SiStripDigi::_timeCPU

private

CPU time.

Definition at line 462 of file SiStripDigi.h.

float sistrip::SiStripDigi::_Vbias

protected

Sensor bias voltage in volts.

Definition at line 404 of file SiStripDigi.h.

float sistrip::SiStripDigi::_Vdepl

protected

Sensor depletion voltage in volts.

Definition at line 403 of file SiStripDigi.h.

The documentation for this class was generated from the following files:

/afs/desy.de/user/d/dudarboh/analysis/iLCSoft/MarlinReco/SiStripDigi/source/include/SiStripDigi.h
/afs/desy.de/user/d/dudarboh/analysis/iLCSoft/MarlinReco/SiStripDigi/source/src/SiStripDigi.cc

Public Member Functions

Protected Member Functions

Protected Attributes

Private Attributes

Detailed Description

Constructor & Destructor Documentation

Member Function Documentation

Member Data Documentation